Semiconductor Memory Devices Including Extended Memory Elements

ABSTRACT

A semiconductor memory device may include a semiconductor substrate having an active region thereof, and the active region may have a length and a width, with the length being greater than the width. A field isolation layer may be on the semiconductor substrate surrounding the active region. First and second wordlines may be on the substrate crossing the active region, with the first and second wordlines defining a drain portion of the active region between the first and second wordlines and first and second source portions of the active region at opposite ends of the active region. First and second memory storage elements may be respectively coupled to the first and second source portions of the active region, with the first and second wordlines being between portions of the respective first and second memory storage elements and the active region in a direction perpendicular to a surface of the substrate.

RELATED APPLICATION

This application claims the benefit of priority as a divisional of U.S. application Ser. No. 11/246,594, filed Oct. 7, 2005, which claims the benefit of priority from Korean Patent Application No. 2004-80460, filed on Oct. 8, 2004, in the Korean Intellectual Property Office. The disclosures of the above referenced U.S. and Korean patent applications are hereby incorporated herein in their entirety by reference.

FIELD OF THE INVENTION

The present invention relates to electronics and more particularly to semiconductor memory devices.

BACKGROUND

In a cell array of a conventional semiconductor memory device, a memory cell may include a switching element and a data storage element, and a cell may have an 8F2 configuration (F being a feature size based on a design rule). Many efforts have been made to provide increased integration of devices. More particularly, an area occupied by a memory cell has been reduced. For example, semiconductor memory devices are changing from 8F2 configurations to 6F2 configurations. Active regions of a 6F2-type cell array recently developed may be diagonal.

Portions of a conventional cell array having diagonal active regions is illustrated in FIG. 1 and FIG. 2. The conventional cell array has a plurality of diagonal active regions. Adjacent active regions are arranged face to face in a major axis direction. To define diagonal shapes on a reticle, a to-be-exposed portion is divided into segments S and S′ of a predetermined width which are exposed discontinuously. Therefore, more time may be required to fabricate a reticle than a square configuration having vertical and horizontal axis directions. Further, a segment size may be determined according to pattern-to-pattern distances B and B′ and a pattern inclination so that correcting patterns may be difficult. If patterns are disposed face to face in a major direction, a bridge may occur at patterns transcribed to a substrate if a distance between adjacent patterns is a feature size A. In the case where patterns are diagonally disposed face to face, as illustrated in FIG. 2, a pattern-to-pattern distance A′ may become narrower than a feature size increasing a possibility that a bridge may occur.

To form a normal pattern during an exposure process, an optical requirement for a light source of a direction corresponding to an inclined axis of a pattern may be provided. Thus, an optical system may adopt a unique aperture to select and irradiate light in the direction corresponding to a pattern axis.

SUMMARY

According to some embodiments of the present invention, a semiconductor memory device may include a substrate having a plurality of active regions, and a field isolation layer on the substrate surrounding the active regions of the semiconductor substrate. More particularly, each of the plurality of active regions may have a length in a direction of a first axis and a width in a direction of a second axis, and the length may be greater than the width. Moreover, the plurality of active regions may be provided in a plurality of columns of active regions in the direction of the second axis, and active regions of adjacent columns may be offset in the direction of the second axis.

According to some additional embodiments of the present invention, a semiconductor memory device may include a substrate having a plurality of active regions, a plurality of wordline pairs on the substrate, and a plurality of bitlines on the substrate crossing the plurality of wordline pairs. Each active region may have a length in a direction of a first axis and a width in a direction of a second axis, and the length may be greater than the width. Moreover, the plurality of active regions may be provided in a plurality of columns of active regions in the direction of the second axis. Each wordline pair may cross active regions of a respective column of active regions defining a drain portion of each active region between wordlines of the respective wordline pair. Each bitline may be electrically coupled to a respective drain portion of an active region of each column, and each bitline may be arranged between the respective drain portion and another drain portion of an adjacent active region.

According to some more embodiments of the present invention, a semiconductor memory device may include a semiconductor substrate having a plurality of active regions, a plurality of wordline pairs on the subtrate, and a plurality of bitlines on the substrate crossing the plurality of wordline pairs. Each active region may have a length in a direction of a first axis and a width in a direction of a second axis, and the length may be greater than the width. Moreover, the plurality of active regions may be provided in a plurality of columns in the direction of the second axis. Each wordline pair may cross active regions of a respective column of active regions defining a drain portion of each active region between wordlines of the respective wordline pair. Each bitline may be electrically coupled to a drain portion of a respective active region of each column, and each bitline may cross drain portions of active regions of adjacent columns in different directions.

According to still more embodiments of the present invention, a semiconductor memory device may include a semiconductor substrate having an active region, a field isolation layer on the semiconductor substrate surrounding the active region, first and second wordlines on the substrate and crossing the active region, and first and second memory storage elements. More particularly, the active region may have a length and a width with the length being greater than the width. The first and second wordlines may define a drain portion of the active region between the first and second wordlines, and first and second source portions of the active region at opposite ends of the active region. The first and second memory storage elements may be respectively coupled to the first and second source portions of the active region, and the first and second wordlines may be between portions of the respective first and second memory storage elements and the substrate in a direction perpendicular to the substrate.

According to some embodiments of the present invention, a cell array may include active regions having horizontal and vertical direction axes. In addition a cell array may include a pattern that is readily designed and optically stable. To achieve these features, a semiconductor memory device may be provided having a cell array including bar-shaped active regions each having a major axis and a minor axis.

According to some embodiments of the present invention, a semiconductor memory device may include bar-shaped first and second active regions having a major axis and a minor axis. The first active regions and the second active regions may be arranged in a minor axis direction to be regularly spaced apart from one another. The second active regions may be arranged in a major axis direction to be regularly spaced apart from the first active regions and may be arranged in the minor axis direction to be ½ pitch spaced from the first active regions.

The first and second active regions may be regularly spaced from adjacent active regions in the respective directions as long as a feature size, respectively. When the first and second active regions are each five times longer than the feature size in a major axis direction, the memory cell may have a 6F2 configuration.

The semiconductor memory device may further include a wordline pair crossing over the first or second active regions. The wordline pair may divide an underlying active region into three segments. In a major axis direction, a length of the segment may be equal to a feature size.

The semiconductor memory device may also include a plurality of bitlines alternately connected to the first active region and the second active region. One of the bitlines may be alternately connected to a plurality of first active regions and a plurality of second active regions that are arranged in one direction to be ½ pitch spaced from the first active regions. More particularly, the bitline may be disposed between a pair of adjacent first active regions and between a pair of second active regions arranged in one direction to be ½ pitch spaced apart from the first active region. Alternatively, the bitlines may be arranged in a zigzag pattern to diagonally cross over the first active region in one direction and to diagonally cross over the second active region in another direction.

If a bitline is disposed between the first active regions and between the second active regions that are ½ pitch spaced from the first active regions, the bitline may be connected to a divided active region between wordlines providing a wordline pair and may extend one direction to be connected to the first and second active regions through the drain pad laid over the bitline.

The semiconductor memory device may further include a data storage element connected to respective divided active regions at opposite sides of the wordline pair. The data storage element may be a capacitor and/or a resistance element. With a ferroelectric memory device or a DRAM device, for example, the data storage element may be a capacitor. With a phase transition memory device or a magnetic tunneling junction (MJT) device, the data storage element may be a resistance element. The data storage element may be connected to the first or second active regions through a source pad connected to respective first and second active regions and a buffer electrode between the source pad and data storage element. The buffer electrode may be partially laid over the wordline. The data storage element may be laid over the source pad and may extend in one direction to be laid over the wordline. Alternatively, the data storage element may have a sidewall laid over the wordline and an opposite sidewall laid over the first or second active region. The data storage elements may be spaced from one another in a minor axis direction of the active region as long as a feature size.

According to some additional embodiments of the present invention, a method may be provided for fabricating a semiconductor device including a cell array having bar-shaped active regions each having a major axis and a minor axis. A device isolation layer may be formed at a semiconductor substrate to define bar-shaped first and second active regions each having a major axis and a minor axis. The first active regions and the second active regions may be arranged in a minor axis direction to be regularly spaced from one another. The second active regions may be regularly spaced from the first active regions in a major axis direction and may be ½ pitch spaced from the first active regions in a minor axis direction.

A plurality of wordline pairs may be formed to cross over the first or second active regions and to divide an underlying active region into three segments. A plurality of bitlines may be formed to be alternately connected to the first active regions and the second active regions. A plurality of data storage elements may be formed to be connected to divided active regions at opposite sides of the wordline pair, respectively.

A first interlayer dielectric may be formed on an entire surface of a substrate where the wordline pair is formed, and a drain pad and a source pad may be formed. The drain pad may be connected to a divided active region between the wordlines providing the wordline pair through the first interlayer dielectric, and the source pad may be connected to respective divided active regions at opposite sides of the wordline pair.

The drain pad may extend in one direction to be laid over the device isolation layer. A second interlayer dielectric may be formed on an entire surface of a substrate where the drain and the source pad are formed. The bitline may be disposed between adjacent first active regions and between a pair of second active regions that are ½ pitch spaced from the first active regions and may be connected to the drain pad through the second interlayer dielectric. A third interlayer dielectric may be formed on an entire surface of a substrate where the bitline is formed. A data storage element may be formed to be connected to the source pad through the third interlayer dielectric and the second interlayer dielectric.

In addition, the bitline may be disposed to diagonally cross over the first active region in one direction and to diagonally cross over the second active region in another direction. A third interlayer dielectric may be formed on an entire surface of a semiconductor substrate where the bitline is formed. A data storage element may be formed to be connected to the source pad through the third interlayer dielectric and the second interlayer dielectric.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 and FIG. 2 are top plan views of conventional DRAM cells.

FIG. 3 and FIG. 4 are top plan views of semiconductor memory device arrays according to some embodiments of the present invention.

FIG. 5 through FIG. 9, FIG. 10A, FIG. 10B, and FIG. 10C are top plan views illustrating steps of fabricating a semiconductor memory device according to first embodiments of the present invention.

FIG. 11 through FIG. 13, FIG. 14A, FIG. 14B, and FIG. 14C are top plan views illustrating steps of fabricating a semiconductor memory device according to second embodiments of the present invention.

FIG. 15A, FIG. 15B, and FIG. 15C are cross-sectional views of a semiconductor memory device according to some additional embodiments of the present invention.

FIG. 16A through FIG. 16C illustrate pad masks for semiconductor memory devices according to methods of first embodiments of the present invention, respectively.

FIG. 17A through FIG. 17C illustrate pad masks for semiconductor memory devices according to methods of second embodiments of the present invention, respectively.

DETAILED DESCRIPTION

The invention now will be described more fully hereinafter with reference to the accompanying drawings, in which embodiments of the invention are shown. This invention may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the invention to those skilled in the art. Moreover, each embodiment described and illustrated herein includes its complementary conductivity type embodiment as well. Like numbers refer to like elements throughout.

It will be understood that when an element is referred to as being “coupled”, “connected”, “responsive” or “in response to” another element, it can be directly coupled, connected, responsive or in response to the other element or intervening elements may be present. In contrast, the term “directly” means there are no intervening elements present. As used herein, the term “and/or” includes any and all combinations of one or more of the associated listed items and may be abbreviated as “/”.

It also will be understood that, as used herein, the terms “row” or “horizontal” and “column” or “vertical” indicate two relative non-parallel directions that may be orthogonal to one another. However, these terms do not require an absolute horizontal or vertical orientation as shown in the figures.

It will be understood that, although the terms first, second, etc. may be used herein to describe various elements, these elements should not be limited by these terms. These terms are only used to distinguish one element from another. For example, a first line could be termed a second line, and, similarly, a second line could be termed a first line without departing from the teachings of the disclosure.

Spatially relative terms, such as “beneath”, “below”, “lower”, “above”, “upper”, “over” and the like, may be used herein for ease of description to describe an element and/or a feature's relationship to another element(s) and/or feature(s) as illustrated in the figures. It will be understood that the spatially relative terms are intended to encompass different orientations of the device in use or operation in addition to the orientation depicted in the figures. For example, if the device in the figures is turned over, elements described as “below” and/or “beneath” other elements or features would then be oriented “above” the other elements or features. Thus, the example term “below” can encompass both an orientation of above and below. The device may be otherwise oriented (rotated 90 degrees or at other orientations) and the spatially relative descriptors used herein interpreted accordingly.

The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. As used herein, the singular forms “a”, “an” and “the” are intended to include the plural forms as well, unless the context clearly indicates otherwise. It will be further understood that the terms “comprises” and/or “comprising,” or “includes” and/or “including” when used in this specification, specify the presence of stated features, regions, integers, steps, operations, elements, and/or components, but do not preclude the presence or addition of one or more other features, regions, integers, steps, operations, elements, components, and/or groups thereof.

Embodiments of the invention are described herein with reference to cross-section illustrations that are schematic illustrations of idealized embodiments (and intermediate structures) of the invention. The thickness of layers and regions in the drawings may be exaggerated for clarity. Additionally, variations from the shapes of the illustrations as a result, for example, of manufacturing techniques and/or tolerances, are to be expected. Thus, embodiments of the invention should not be construed as limited to the particular shapes of regions illustrated herein but are to include deviations in shapes that result, for example, from manufacturing. Thus, the regions illustrated in the figures are schematic in nature and their shapes are not intended to illustrate the actual shape of a region of a device and are not intended to limit the scope of the invention. It will be understood, for example, that a rectangular feature may have rounded corners.

Unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. It will be further understood that terms, such as those defined in commonly used dictionaries, should be interpreted as having a meaning that is consistent with their meaning in the context of the relevant art and the present disclosure, and will not be interpreted in an idealized or overly formal sense unless expressly so defined herein.

FIG. 3 and FIG. 4 are top plan views of semiconductor memory cell arrays according to first and second embodiments of the present invention, respectively.

As illustrated in FIG. 3, a semiconductor memory device according to first embodiments of the present invention may include bar-shaped first and second active regions 102 a and 102 b, each having a major axis and a minor axis. A major axis of an active region may be a horizontal (or vertical) axis of a substrate, and a minor axis thereof may be a vertical (or horizontal) axis of the substrate. The major axis and the minor axis may be perpendicular with respect to each other. The first active regions 102 a may be arranged in columns in a direction of a minor axis to be regularly spaced apart from one another, and the second active regions 102 b may also be arranged in columns in the direction of the minor axis to be regularly spaced apart from one another. Columns of the second active regions 120 b may be regularly spaced from adjacent columns of the first active regions 102 a in a direction of a major axis and may be ½ pitch spaced from the first active regions 102 a in the minor axis direction. In other words, active regions 102 a may be offset relative to active regions 102 b by a distance equal to a width of an active region. A cell array may include columns arranged alternately, with a first column including first active regions 102 a and with a second column including second active regions 102 b. The first active regions 102 a may have the same shape as the second active regions 102 b. In a major axis direction, the first and second active regions 102 a and 102 b may each be about five times longer than a feature size (e.g., a width of an active region). Each of the active regions may be spaced from adjacent active regions in the major and/or minor axis directions by a distance as long as the feature size (e.g., a width of an active region).

Pairs of wordlines 104 (wordline pairs) may cross over the first active regions 102 a and/or the second active regions 102 b. The wordlines 104 may have a feature size (e.g., a width equal to a width of an active region). Each of the first active regions 102 a and/or the second active regions 102 b is divided into three segments by a respective wordline pair. In an active region, a drain pad 106 d is connected to a central portion of the active region between the wordlines of the respective wordline pair. A pair of source pads 106 b may be connected to respective ends of each active region so that each source pad 106 b of an active region is separated from the drain pad of the active region by a respective wordline. The drain pad 106 d extends from an upper portion of the active region over a portion of an area between the active regions (i.e., over a portion of a device isolation area). Bitlines 110 may cross over the wordlines 104. Each bitline 110 may be alternately connected to first and second active regions 102 a and 102 b through respective drain pads 106 d. The bitline 110 passes between a pair of first active regions 102 a, which are ½ pitch spaced from the second active regions 102 b in one direction, and between a pair of second active regions 102 b. Because the drain pad 106 d extends from the active region to a device isolation area, it may be connected to an overlying bitline 110. Each bitline 110 may have a feature size (e.g., a width equal to a width of an active region) and may be spaced from an adjacent bitline by a distance as long as the feature size. The bitline 110 may be connected to the drain pad 106 d through a bitline plug 108. The bitline plug 108 and the bitline 110 may be unified.

Data storage elements 116 may be connected to respective source pads at opposite ends of each active region. With a DRAM (Dynamic Random Access Memory), the data storage element may be a cylindrical capacitor, a box-type capacitor and/or an MIM (Metal Insulator Metal) capacitor. With a ferroelectric memory device, the data storage element may be a ferroelectric capacitor. With a phase transition memory device, the data storage element may be a phase transition resistance memory element. With a magnetic memory device, the data storage element may be an MJT (Magnetic Tunnel Junction) resistance element.

A data storage element 116 may be connected to an active region through a respective source pad 106 b. A buffer electrode 114 may be further formed between each source pad 106 b and the (respective) data storage element 116. The buffer electrode 114 may be provided over the source pad 106 b and may be provided partially overlapping the respective wordline. A buffer electrode 114 may be structurally disposed toward the center of an active region to widen a space between data storage elements 116 connected to adjacent active regions. A buffer electrode 114 may be connected to a respective source pad 106 b through a storage plug 112, so that the data storage element 116 is connected to the active region through the buffer electrode 114 and the source pad 106 b.

Although not shown in FIG. 3, the storage plug 112 may be in direct contact with the data storage element 116. In this case, the buffer electrode 114 may be omitted.

Further, the data storage element 116 may be partially laid over the source pad 106 b so as to widen a space between data storage elements formed on adjacent active regions. That is, the data storage element 116 may have a sidewall laid over a portion of the adjacent wordline and an opposite sidewall may be laid over the active region.

As illustrated in FIG. 4, active regions of a semiconductor memory device according to second embodiments of the present invention may have a same arrangement as those of the semiconductor memory device of FIG. 3. The memory device may further include first active regions 202 a and second active regions 202 b. Each of the first and second active regions 202 a and 202 b may be bar-shaped (e.g., rectangular) and may have a major axis and a minor axis. The first active regions 202 a may be arranged in a direction of the minor axis to be regularly spaced apart from one another. The second active regions 202 b may be arranged in a direction of the minor axis to be regularly spaced apart from one another. The second active regions 202 b may be arranged in the major axis to be regularly spaced from the first active regions 202 a. The second active regions 202 b may be arranged in the direction of the major axis to be ½ pitch spaced from the first active regions 202 a, respectively. In other words, active regions 202 a may be offset relative to active regions 102 b by a distance equal to a width of an active region.

A cell array includes columns and rows which may be alternately arranged. Each of the rows may include the first active regions 202 a, and each of the columns may include the second active regions 202 b. The first and second active regions 202 a and 202 b may have the same shape. In the major axis direction, the first and second active regions 202 a and 202 b may each be five times longer than a feature size (e.g., a width). Each of the active regions may be spaced apart from adjacent active regions in the major and/or minor axis by a distance about as long as the feature size.

Pairs of wordlines 204 (wordline pairs) cross over the first active regions 202 a and the second active regions 202 b. Each of the wordlines 204 has a feature size (e.g., a width equal to a width of an active region). A wordline pair divides a respective active region 202 a or 202 b into three segments. A drain pad 206 d is connected to a portion of an active region between wordlines of the respective wordline pair. Source pads 206 b are connected to respective ends of an active region at opposite sides of the respective wordline pair. Bitlines 210 cross over the wordlines 204. The bitline 210 may be alternately connected to first active regions 202 a and second active regions 202 b. The bitlines 210 may be connected to respective first and second active regions 202 a and 202 b through drain pad 206 d.

Each bitline 210 diagonally crosses the first active regions 202 a in one direction and diagonally crosses the second active region 202 b in another direction. That is, the bitlines 210 have a zigzag shape. Unlike the structure of FIG. 3, the drain pad 206 d may be provided only over the active region. In FIG. 4, the bitline 210 may have a feature size (e.g., a width equal to a width of an active region) and may be spaced from an adjacent bitline by a distance about as long as the feature size. A bitline 210 may be connected to a respective drain pad 206 d through a respective bitline plug 208. In a alternative, the bitline plugs 208 and the respective bitlines may be unified.

Data storage elements 216 may be connected to opposite ends of active regions at opposite sides of respective wordline pairs. With a DRAM, the data storage element 216 may be a cylindrical capacitor, a box-type capacitor, and/or an MIM capacitor. With a ferroelectric memory device, the data storage element 216 may be a ferroelectric capacitor. With a phase transition memory device, the data storage element 216 may be a phase transition resistance element. With a magnetic memory device, the data storage element 216 may be an MJT resistance element.

Each data storage element 216 may be connected to a respective active region through a respective source pad 206 b. A buffer electrode 214 may be further formed between the source pad 206 b and the data storage element 216. The buffer electrode 214 may be provided over the source pad 206 b and provided partially over the adjacent wordline. A buffer electrode 214 may be structurally provided toward the center of an active region to widen a space between data storage elements 216 connected to adjacent active regions. The buffer electrodes 214 may be connected to respective source pads 206 b through storage plugs 212, so that the data storage elements 216 are connected to the active regions through the buffer electrodes 214 and the source pads 206 b.

Although not shown in FIG. 4, the storage plugs 212 may be in direct contact with the respective data storage elements 216. In this case, the buffer electrodes 214 may be omitted.

Further, the data storage elements 216 may be provided partially over respective source pads 206 b to widen a space between data storage elements formed on adjacent active regions. That is, each data storage element 216 may have a sidewall over the wordline and an opposite sidewall over the active region.

FIG. 5 through FIG. 9, FIG. 1A, FIG. 10B, and FIG. 10C are top plan views illustrating steps of fabricating a semiconductor memory device according to first embodiments of the present invention.

As illustrated in FIG. 5, device isolation layers are formed on a semiconductor substrate 100 to define first active regions 102 a and second active regions 102 b. The first and second active regions 102 a and 102 b are bar-shaped (e.g., rectangular) to define a major axis (in a length direction) and a minor axis (in a width direction). In a minor axis direction, the first active regions 102 a and the second active regions 102 b are regularly spaced apart from one another by a distance of about P/2 (e.g. a width of an active region). Columns of first and second active regions are alternately arranged in a cell array. The first active regions 102 a are spaced apart from one another by a distance of about P/2 as long as a feature size (e.g., a width of an active region). The second active regions 102 b are also spaced apart from one another by a distance of about P/2 as long as the feature size (e.g., width of an active region). The first active regions 102 a and the second active regions 102 b have a feature size (e.g., width) in the direction of the minor axis. The second active regions 102 b are arranged in the direction of the the minor axis to be ½ pitch spaced from the first active regions 102 a. In other words, the first and second active regions 102 a and 102 b are offset in the minor axis direction by a distance of about P/2. The first and second active regions 102 a and 102 b may have a same shape, such as a rectangular shape. In a major axis direction, the first active regions 102 a and the second active regions 102 b may be five times longer than a feature size (e.g., width) thereof. The first active regions 102 a and the second active regions 102 b may have a feature size (e.g., width) in a minor axis direction.

As illustrated in FIG. 6, wordlines 104 may be formed with respective pairs of the wordlines 104 crossing over respective first active regions 102 a or respective second active regions 102 b. In other words, each wordline pair crosses over a respective column of active regions 102 a or 102 b. Therefore, each active region 102 a or 102 b is divided into three segments by the respective wordline pair. Each wordline 104 has a feature size (e.g., width) and each active region segment (defined by the respective wordline pair) has a feature size in a direction of the major axis.

As illustrated in FIG. 7, a drain pad 106 d is formed on a central portion of each active region between the two wordlines 104 of the respective wordline pair. A source pad 106 b is formed at each end of each active region on opposite sides of the respective wordline pair. The drain pad 106 d of an active region extends from the central portion of the active region in one direction over a portion of the device isolation layer. A first interlayer dielectric may be formed to cover the drain pads 106 d and the source pads 106 b. The first interlayer dielectric may be formed using a self-aligned contact (SAC) process.

As illustrated in FIG. 8, bitlines 110 may be formed crossing over the wordlines 104. The bitlines 110 may be alternately connected to first and second active regions 102 a and 102 b. The bitlines 110 may pass between adjacent second active regions 102 b (which are ½ pitch spaced from the first active regions 102 a in one direction) and between adjacent first active region 102 a. Each bitline 110 may be connected to respective drain pads 106 d through respective bitline plugs 108. A second interlayer dielectric may thus be formed on an entire surface of a substrate including the source pads 106 b and the drain pads 106 d, and bitline plugs 108 may be formed connected to the drain pads 106 d through the second interlayer dielectric. Bitlines may then be formed connected to the bitline plugs 108. Alternatively, contact holes may be formed using a dual damascene process to expose the drain pads 106 d simultaneously with formation of bitline grooves, and then, the contact holes and the bitline grooves may be filled with a conductive layer, so that each bitline is in direct contact with respective drain pads.

As illustrated in FIG. 9, buffer electrodes 114 may be formed connected to respective source pads 106 b through respective storage plugs 112. The buffer electrodes 114 may serve to secure space between data storage elements connected to first active regions and data storage elements connected to second active regions and to increase an area occupied by each data storage element.

A third interlayer dielectric may be formed on the substrate including the bitlines 110. Storage plugs 112 may be formed connected to respective source pads 106 b through the third interlayer dielectric and the second interlayer dielectric. The buffer electrodes 114 may be formed on respective storage plug 112, and each buffer electrode 114 may extend across a portion of the third interlayer dielectric opposite the adjacent word line.

As illustrated in FIG. 10A, a data storage element 116 may be formed on each of the buffer electrodes 114. Portions of a data storage element 116 may extend over the adjacent wordline to increase an area occupied by the data storage element. The data storage element 116 may be a capacitor or a resistance element according to the type of semiconductor memory device being fabricated. A method of forming the data storage element 116 may vary with the type of memory device being fabricated.

FIG. 10B is a top plan view illustrating a modified version of methods according to first embodiments of the present invention. In this modified embodiment, a buffer electrode 114 may be omitted. More particularly, at a step of FIG. 9, after forming storage plugs 112 a without forming buffer electrodes, data storage elements 116 a may be in direct contact with respective storage plugs 112 a. Each data storage element 116 a may partially extend over a respective wordline.

FIG. 10C is a top plan view illustrating another modified version of methods according to first embodiments of the present invention. In this modified embodiment, each data storage element 116 b may have a sidewall laterally shifted from the source pad 106 b to lay over the adjacent wordline 104 and an opposite sidewall to lay over an underlying active region. Such a structure may be realized using of the buffer electrode 114. Thus, a free space may be used to reduce a likelihood of a short circuit between adjacent data storage elements.

FIG. 11 through FIG. 13, FIG. 14A, FIG. 14B, and FIG. 14C are top plan views illustrating steps of a method of fabricating a semiconductor memory device according to second embodiments of the present invention.

As illustrated in FIG. 11, first and second active regions 202 a 202 b and pairs of wordlines 204 may be formed as discussed above with respect to FIGS. 5-6.

At each active region, a drain pad 206 d may be formed at a central portion of the active region between two wordlines 204 of the wordline pair crossing the active region, and first and second source pads 206 b may be formed at first and second ends of the active region on opposite sides of the wordline pair crossing the active region. Unlike the structures illustrated in FIG. 7, the drain pads 206 d do not extend beyond the respective active regions in one direction over the isolation region but are instead confined over the respective active regions. The drain pads 206 d and the source pads 206 b may be formed by forming a first interlayer dielectric covering the substrate including the wordlines and applying a self-aligned contact (SAC) process.

As illustrated in FIG. 12, each bitline 210 may be formed crossing over the wordlines 204 to be alternately connected to first and second active regions 202 a and 202 b. The bitlines 210 may be provided in a zigzag pattern to diagonally cross first active regions 202 a in one direction and to diagonally cross second active regions 202 b in another direction. Each bitline 210 is connected to respective first and second active regions 202 a and 202 b that are ½ pitch spaced (e.g., offset) from each other in the minor axis direction. The bitlines 210 may be connected to respective drain pads 206 d through bitline plugs 208. For this reason, bitlines connected to a bitline plugs 208 may be formed after forming a second interlayer dielectric on an entire surface of the substrate including the source pads 206 b and the drain pads 206 d are formed and forming the bitline plugs 208 connected to the drain pads 206 d through the second interlayer dielectric. Alternatively, a dual damascene process may be used to form contact holes exposing the drain pads 206 d simultaneously with forming bitline grooves. Then, the contact holes and the bitline grooves are filled with a conductive material to provide bitlines to be in direct contact with respective drain pads.

As illustrated in FIG. 13, buffer electrodes 214 may be formed connected to respective source pads 206 b through storage plugs 212. The buffer electrodes 214 may serve to provide space between data storage elements connected to adjacent active regions and to increase an area occupied by data storage elements.

A third interlayer dielectric may be formed on an entire surface of substrate including the bitlines 210. Storage plugs 212 may be formed connected to respective source pads 206 b through the third interlayer dielectric and the second interlayer dielectric. The buffer electrodes 214 may be formed on the storage plugs 212.

As illustrated in FIG. 14A, data storage elements 216 may be formed on respective buffer electrodes 214. The data storage elements 216 may be capacitors or resistance elements according to the type of semiconductor memory device. A method of fabricating the data storage elements 216 may vary with the type of semiconductor memory device.

FIG. 14B is a top plan view illustrating a modified version of the method of FIGS. 11-13. In this modified embodiment, a buffer electrode 214 may be omitted. That is, at a step of FIG. 9, after forming storage plugs 212 a without forming buffer electrodes, data storage elements 216 a may be in direct contact with respective storage plugs 212 a. The data storage elements 216 a may extend partially over the wordline.

FIG. 14C is a top plan view illustrating another modified version of the method of FIGS. 11-13. This modified embodiment may be applied to provide space between data storage elements connected to adjacent first and second active regions 202 a and 202 b rather than to increase an area occupied by the data storage elements 216. Each data storage element 216 b may have a sidewall that is laterally shifted with respect to the source pad 206 b so that a portion of the data storage element extends over an adjacent wordline 204 and an opposite sidewall laid over an underlying active region. Such a structure may be realized using the buffer electrodes 114. Thus, a free space may be used to reduce a likelihood of a short between adjacent data storage elements.

FIG. 15A, FIG. 15B, and FIG. 15C are cross-sectional views illustrating a semiconductor memory device according to embodiments of the present invention. While a DRAM cell having a cylindrical storage node is described by way of example, embodiments of the present invention may be applied to semiconductor memory devices including memory cells having other switching and/or other data storage elements.

As illustrated in FIG. 15A, device isolation layers 301 may be formed on a substrate 300 to define active regions 302. A wordline pair including two wordlines 304 a and 304 b crosses over the active region 302. As shown, each wordline 304 a-b may include respective conductive layers 293 a-b and 295 a-b and respective insulating capping layers 297 a-b. In addition, insulating spacers 299 a-b may be provided on sidewalls of the respective wordlines 304 a-b. Moreover, gate insulating layers 291 a-b may be provided between the respective wordlines 304 a-b and the active region 302.

A first planar interlayer dielectric 307 may be formed on the structure including the wordline pair. The first interlayer dielectric 307 may be patterned to provide self-aligned contact holes 308 between and on opposite sides of the wordlines 304 a-b thereby exposing source and drain regions 306 b and 306 d. The contact holes may be filled with a conductive layer to form source pads 306 b and a drain pad 306 d. A second interlayer dielectric 309 may be formed on the structure including the source pad 306 b and the drain pad 306 d. A bitline 310 is connected to the drain pad 306 d through the second interlayer dielectric 309. A third interlayer dielectric 311 may be formed on the structure including the bitline 310. Storage plugs 312 may be connected to respective source pads 306 through the third interlayer dielectric 311 and the second interlayer dielectric 309.

Buffer electrodes 314 may be provided on respective storage plugs 312. The buffer electrodes 314 may each extend partially over the adjacent wordlines 304 a-b. In other words, the wordlines 304 a-b may be between portions of respective buffer electrodes and the substrate in a direction perpendicular to a surface of the substrate. A fourth interlayer dielectric 313 may be formed on the structure including the buffer electrodes 314. Storage electrode 316 a may be formed on respective buffer electrodes 314. Lower portions of storage electrodes 316 a may be supported by a support layer 315.

In FIG. 15A, the storage electrodes 316 a may extend over respective wordlines 304 a-b. That is, a surface area of the substrate occupied by a storage electrode may extend beyond a surface area of the substrate occupied by the respective source region 306 b and over a surface area of the substrate occupied by the adjacent wordline that is otherwise unused, while maintaining a spacing with respect to storage electrodes formed at another active region to increase a surface area of the storage electrodes. Alternately, storage electrodes 316 b may be shifted toward the center of an active region without increasing an area of the storage electrodes to maintain a spacing with respect to adjacent storage electrodes of adjacent active regions, as illustrated in FIG. 15B. FIG. 15C illustrates storage electrodes 316 c that are in direct contact with storage plugs 312.

FIG. 16A through FIG. 16C illustrate pad masks of semiconductor memory devices according to the first embodiments of the present invention.

As illustrated in FIG. 16A, a mask 405 a used to form drain pads and source pads may have wordlines 404 and openings 407 a and 407 a′. The wordlines 404 include bar-shaped (e.g., rectangular) mask areas corresponding to wordline regions of the substrate. Isolation regions correspond to device isolation regions between active regions of the substrate. The openings 407 a′ are provided to expose portions of active regions of the substrate between wordlines.

A pad mask 405 b illustrated in FIG. 16B is an inverse image of a mask for forming an active region. Since the pad mask 405 b has openings 407 b and 407 b′ formed at portions corresponding to active regions, regions between wordlines 404 and the wordlines may be exposed.

FIG. 16C illustrates a pad mask having first (relatively large) openings 470 c′ and second (relatively small) openings 407 c at regions where a drain pads and source pads are to be formed. The first openings 407 c′ define contact holes for forming drain pads, and the second openings 407 c define contact holes for forming source pads. The first openings 407 c′ and the second openings 407 c may be provided partially over respective wordlines.

Using various pad masks described above, drain pads and source pads of first embodiments of the present invention may be formed. Since a portion of each drain pad extends over a device isolation region, openings 407 a′, 407 b′, and 407 c′ of the pad masks include extended portions.

FIG. 17A through FIG. 17C illustrate pad masks for semiconductor memory devices according to second embodiments of the present invention.

Pad masks illustrated in FIG. 17A through FIG. 17C have shapes similar to shapes of the pad masks illustrated in FIG. 16A through FIG. 16C, respectively. Unlike the pad masks of FIGS. 16A through 16C, however, the pad masks of FIGS. 17A through 17C do not have extended portions for the drain pads. Locations of wordlines 504 and openings 507 a′, 507 b′, and 507 c′ of FIGS. 17A through 17C are identical to those of wordlines and openings of FIGS. 16A through 16C.

Advantages of semiconductor memory devices according to embodiments of the present invention may include reduced writing time, increased pattern correcting margin, and/or reduced bridging between memory storage elements of different active regions along a major axis direction.

Although the invention has been described with reference to the particular embodiments thereof, it will be understood that the invention is not limited to the details thereof. Various substitutions and modifications have been suggested in the foregoing description, and other will occur to those of ordinary skill in the art. Therefore, all such substitutions and modifications are intended to be embraced within the scope of the invention as defined in the appended claims. 

1. A semiconductor memory device comprising: a semiconductor substrate including an active region thereof, wherein the active region has a length and a width, wherein the length is greater than the width; a field isolation layer on the semiconductor substrate surrounding the active region; first and second wordlines on the substrate and crossing the active region, wherein the first and second wordlines define a drain portion of the active region between the first and second wordlines and first and second source portions of the active region at opposite ends of the active region; and first and second memory storage elements respectively coupled to the first and second source portions of the active region, wherein the first and second wordlines are between portions of the respective first and second memory storage elements and the active region in a direction perpendicular to a surface of the substrate.
 2. A semiconductor memory device according to claim 1 further comprising: a drain plug on the drain portion of the active region wherein a portion of the drain plug extends onto the field isolation layer opposite the substrate; and a bit line crossing the first and second wordlines, wherein the bitline is electrically coupled to the drain portion of the active region through the drain plug, and wherein a portion of the drain plug is between a portion of the digit line and the field isolation layer.
 3. A semiconductor memory device according to claim 2 wherein a portion of the bitline coupled to the drain plug is parallel with respect to the length of the active region.
 4. A semiconductor memory device according to claim 1 further comprising: a bit line electrically coupled to the drain portion of the active region wherein the bitline crosses the drain portion of the active region at an angle non-parallel with respect to the length of the active region and non-parallel with respect to the width of the active region.
 5. A semiconductor device according to claim 2 wherein the drain plug extends on the field isolation layer in a first direction perpendicular to the active region on a first side of the active region further than the drain plug extends in a second direction on a second side of the active region wherein the first and second directions are opposite directions. 